6 research outputs found
High-fidelity single-shot readout for a spin qubit via an enhanced latching mechanism
The readout of semiconductor spin qubits based on spin blockade is fast but
suffers from a small charge signal. Previous work suggested large benefits from
additional charge mapping processes, however uncertainties remain about the
underlying mechanisms and achievable fidelity. In this work, we study the
single-shot fidelity and limiting mechanisms for two variations of an enhanced
latching readout. We achieve average single-shot readout fidelities > 99.3% and
> 99.86% for the conventional and enhanced readout respectively, the latter
being the highest to date for spin blockade. The signal amplitude is enhanced
to a full one-electron signal while preserving the readout speed. Furthermore,
layout constraints are relaxed because the charge sensor signal is no longer
dependent on being aligned with the conventional (2, 0) - (1, 1) charge dipole.
Silicon donor-quantum-dot qubits are used for this study, for which the dipole
insensitivity substantially relaxes donor placement requirements. One of the
readout variations also benefits from a parametric lifetime enhancement by
replacing the spin-relaxation process with a charge-metastable one. This
provides opportunities to further increase the fidelity. The relaxation
mechanisms in the different regimes are investigated. This work demonstrates a
readout that is fast, has one-electron signal and results in higher fidelity.
It further predicts that going beyond 99.9% fidelity in a few microseconds of
measurement time is within reach.Comment: Supplementary information is included with the pape